AOD5N50 500v,5a n-channel mosfet 600v@150 i d (at v gs =10v) 5a r ds(on) (at v gs =10v) < 1.6 ? symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc maximum junction-to-ambient a ,g t c =25c - 55 maximum thermal characteristics units c/w 43 parameter typical w w/ o c maximum lead temperature for soldering p ur p ose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 150 c power dissipation b p d v 30 gate-source voltage t c =100c a i d t c =25c 5 3.1 the AOD5N50 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 500 17 pulsed drain current c continuous drain current b mj avalanche current c 118 repetitive avalanche energy c derate above 25 o c 104 0.83 a 2.8 single plused avalanche energy h 235 mj v/ns 5 maximum case-to-sink a maximum junction-to-case d,f c/w c/w 1 0.5 1.2 g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units 500 600 bv dss / ? tj 0.6 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.4 4.1 4.5 v r ds(on) 1.2 1.6 ? g fs 5s v sd 0.76 1 v i s maximum body-diode continuous current 5 a i sm 17 a c iss 430 538 670 pf c oss 40 58 80 pf c rss 2.5 4.5 7 pf r g 1.2 2.3 3.5 ? q g 9 11.5 14 nc q gs 3 3.8 4.6 nc q gd 2 4.1 6.2 nc t d(on) 18 ns t r 32 ns t d(off) 34 ns t f 22 ns t rr 145 182 220 ns q rr 1.7 2.2 2.7 c drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c body diode reverse recovery charge i f =5a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =250v, i d =5a, r g =25 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =400v, i d =5a gate source charge gate drain charge v ds =5v i d =250 a v ds =400v, t j =125c i s =1a,v gs =0v v ds =40v, i d =2.5a forward transconductance dynamic parameters zero gate voltage drain current id=250a, vgs=0v v ds =0v, v gs =30v i dss zero gate voltage drain current v ds =500v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss a v body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =2.5a reverse transfer capacitance i f =5a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters a. the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. l=60mh, i a s =2.8a, v dd =150v, r g =10 ? , starting t j =25c www.freescale.net.cn 2/6 AOD5N50 500v,5a n-channel mosfet
typical electrical and thermal characteristic s 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c i d =30a 25c 125c 0 2 4 6 8 10 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 246810 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 024681012 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =2.5a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) www.freescale.net.cn 3/6 AOD5N50 500v,5a n-channel mosfet
typical electrical and thermal characteristic s 0 3 6 9 12 15 0 3 6 9 12 15 18 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =400v i d =2.5a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 1 0 m s 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 s 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1.2c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse sin g le pulse t on t p d www.freescale.net.cn 4/6 AOD5N50 500v,5a n-channel mosfet
typical electrical and thermal characteristic s 0 30 60 90 120 0 25 50 75 100 125 150 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0 1 2 3 4 5 6 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 500 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) power (w) t j(max) =150c t a =25c 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d www.freescale.net.cn 5/6 AOD5N50 500v,5a n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d( on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds is d is d diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 6/6 AOD5N50 500v,5a n-channel mosfet
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